THE EFFECT OF SHALLOW TRENCH ISOLATION (STI) TOPOLOGY, SIDEWALL DOPING AND LAYOUT-RELATED STRESS ON RADIATION-INDUCED LEAKAGE CURRENT By
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چکیده
ii ACKNOWLEDGEMENTS I would first of all like to thank Dr. Schrimpf for his continual support, confidence, and guidance throughout this project. Not only has Dr. Schrimpf been a tremendous source of assistance and encouragement, but I would not even be a graduate student if it were not for Dr. Schrimpf's quick responses to my numerous e-mails, and his support of my application prior to entering Vanderbilt University. I would also like to thank Professor Michael Alles who basically acted like a second advisor to me throughout this work. His useful comments and support for my research helped me to have a clear idea on whatever needed to be done. I thank Yanfeng Li from Accelicon for providing wafers and allowing me to complete this work. I thank ISDE, DTRA, NRL, USAF MURI and Vanderbilt School of Engineering for providing the funds for this work. I also would like to thank John Sochacki and Professor Barnaby from (Arizona State University) who contributed to this work. I would like to thank all the friends from graduate school: for their friendship. Last but not least I thank my mother and my father, my sister Myriam, and Pierre for everything they have done for me.
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